Oscillating magnetoresistance in diluted magnetic semiconductor barrier structures
نویسندگان
چکیده
Ballistic spin polarized transport through diluted magnetic semiconductor single and double barrier structures is investigated theoretically using a two-component model. The tunneling magnetoresistance ~TMR! of the system exhibits oscillating behavior when the magnetic field is varied. An interesting beat pattern in the TMR and spin polarization is found for different nonmagnetic semiconductor/diluted magnetic semiconductor double barrier structures which arises from an interplay between the spin-up and spin-down electron channels which are split by the s-d exchange interaction.
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